Home
Tel: 86-755-83295289
Email:
mail@cxda.com
English
简体中文
한국어
About Us
All Product
Manufacturers
RFQ
Quality Control
News
Contact Us
PartNo
Keyword
Product Detail
All Product >
Discrete Semiconductors
>
Diodes
>
Infineon Technologies (BSC340N08NS3 G)
PartNo:
BSC340N08NS3 G
Manufacturers:
Infineon Technologies
Qty:
18791
Request Qty:
Description:
MOSFET OptiMOS2 PWR Transistor N-CH
PDF:
Quick Quotation
Company Name:
*
Contact Name:
*
Email:
*
Tel:
*
Request Qty:
*
*
Verification Code:
*
Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
23 A
Rds On - Drain-Source Resistance:
34 mOhms
Configuration:
Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Mounting Style:
Package / Case:
TDSON-8
Packaging:
Reel
AUIRF7342QTR
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
BSC340N08NS3 G Related Product
BSC32N03SG
BSC320N20NS
BSC320N20NS3 G
BSC320N20NS3G
BSC32N03S
BSC340N08NS3 G
BSC350N20NSFD
BSC360N15NS3 G
BSC360N15NS3G
BSC360N15NS3-G
BSC32N03S
BSC340N08NS3G
BSC340N08NS3G
BSC360N15NS3 G
BSC320N20NS3 G
BSC340N08NS3 G
BSC360N15NS3 G
BSC320N20NS3 G
BSC340N08NS3 G
BSC360N15NS3 G
BSC320N20NS3 G
BSC340N08NS3 G
Electronic Components Distributor
Since 2000
©2001 - 2015 www.cxda.com all rights reservied.
FAQ
Product Index
Contact Us
Quality Control
RFQ
Manufacturers
About Us
Electronic Components Supplier |
China Electronic Components Manufacturer |
Electronic Components Distributor
粤ICP备15038990号